Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FDP12N50NZ
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RFQ
1,710
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ON Semiconductor MOSFET N-CH 500V 11.5A TO-220 UniFET-II™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 170W (Tc) N-Channel - 500V 11.5A (Tc) 520 mOhm @ 5.75A, 10V 5V @ 250µA 30nC @ 10V 1235pF @ 25V 10V ±25V
STP11NM60
RFQ
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RFQ
2,070
In-stock
STMicroelectronics MOSFET N-CH 650V 11A TO-220 MDmesh™ Not For New Designs Tube MOSFET (Metal Oxide) -65°C ~ 150°C (TJ) Through Hole TO-220AB 160W (Tc) N-Channel - 650V 11A (Tc) 450 mOhm @ 5.5A, 10V 5V @ 250µA 30nC @ 10V 1000pF @ 25V 10V ±25V
STP11NM60ND
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RFQ
1,372
In-stock
STMicroelectronics MOSFET N-CH 600V 10A TO-220 FDmesh™ II Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220AB 90W (Tc) N-Channel - 600V 10A (Tc) 450 mOhm @ 5A, 10V 5V @ 250µA 30nC @ 10V 850pF @ 50V 10V ±25V
FDP10N60NZ
RFQ
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RFQ
1,391
In-stock
ON Semiconductor MOSFET N-CH 600V 10A TO-220 UniFET-II™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 185W (Tc) N-Channel - 600V 10A (Tc) 750 mOhm @ 5A, 10V 5V @ 250µA 30nC @ 10V 1475pF @ 25V 10V ±25V