Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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STI34N65M5
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1,949
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STMicroelectronics MOSFET N-CH 650V 28A I2PAK MDmesh™ V Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Full Pack, I²Pak I2PAKFP (TO-281) 190W (Tc) N-Channel - 650V 28A (Tc) 110 mOhm @ 14A, 10V 5V @ 250µA 62.5nC @ 10V 2700pF @ 100V 10V ±25V
STFI34N65M5
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2,017
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STMicroelectronics MOSFET N CH 650V 28A I2PAKFP MDmesh™ V Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-262-3 Full Pack, I²Pak I2PAKFP (TO-281) 35W (Tc) N-Channel - 650V 28A (Tc) 110 mOhm @ 14A, 10V 5V @ 250µA 62.5nC @ 10V 2700pF @ 100V 10V ±25V
STFI31N65M5
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RFQ
1,964
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STMicroelectronics MOSFET N CH 650V 22A I2PAKFP MDmesh™ V Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-262-3 Full Pack, I²Pak I2PAKFP (TO-281) 30W (Tc) N-Channel - 650V 22A (Tc) 148 mOhm @ 11A, 10V 5V @ 250µA 45nC @ 10V 1865pF @ 100V 10V ±25V
STFI20N65M5
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RFQ
2,618
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STMicroelectronics MOSFET N CH 650V 18A I2PAKFP MDmesh™ V Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-262-3 Full Pack, I²Pak I2PAKFP (TO-281) 130W (Tc) N-Channel - 650V 18A (Tc) 190 mOhm @ 9A, 10V 5V @ 250µA 45nC @ 10V 1345pF @ 100V 10V ±25V
STFI15N65M5
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RFQ
2,878
In-stock
STMicroelectronics MOSFET N CH 650V 11A I2PAKFP MDmesh™ V Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-262-3 Full Pack, I²Pak I2PAKFP (TO-281) 30W (Tc) N-Channel - 650V 11A (Tc) 340 mOhm @ 5.5A, 10V 5V @ 250µA 22nC @ 10V 816pF @ 100V 10V ±25V