Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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STW34NM60ND
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2,848
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STMicroelectronics MOSFET N-CH 600V 29A TO-247 FDmesh™ II Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247 190W (Tc) N-Channel - 600V 29A (Tc) 110 mOhm @ 14.5A, 10V 5V @ 250µA 80.4nC @ 10V 2785pF @ 50V 10V ±25V
STW26NM60ND
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2,135
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STMicroelectronics MOSFET N-CH 600V 21A TO247 FDmesh™ II Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247 190W (Tc) N-Channel - 600V 21A (Tc) 175 mOhm @ 10.5A, 10V 5V @ 250µA 54.6nC @ 10V 1817pF @ 100V 10V ±25V
STW28NM60ND
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3,908
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STMicroelectronics MOSFET N-CH 600V 23A TO-247 FDmesh™ II Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247 190W (Tc) N-Channel - 600V 23A (Tc) 150 mOhm @ 11.5A, 10V 5V @ 250µA 62.5nC @ 10V 2090pF @ 100V 10V ±25V
STW18NM60ND
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RFQ
2,293
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STMicroelectronics MOSFET N-CH 600V 13A TO-247 FDmesh™ II Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247 110W (Tc) N-Channel - 600V 13A (Tc) 290 mOhm @ 6.5A, 10V 5V @ 250µA 34nC @ 10V 1030pF @ 50V 10V ±25V