Packaging :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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STMicroelectronics MOSFET N-CHANNEL 600V 66A TO247 MDmesh™ DM2 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 Long Leads 446W (Tc) N-Channel 600V 66A (Tc) 42 mOhm @ 33A, 10V 5V @ 250µA 120nC @ 10V 5508pF @ 100V 10V ±25V
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STMicroelectronics MOSFET MDmesh™ DM2 Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 Long Leads 300W (Tc) N-Channel 600V 40A (Tc) 79 mOhm @ 20A, 10V 5V @ 250µA 70nC @ 10V 3250pF @ 100V 10V ±25V