Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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GP1M008A025PG
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RFQ
3,646
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Global Power Technologies Group MOSFET N-CH 250V 8A IPAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 52W (Tc) N-Channel 250V 8A (Tc) 600 mOhm @ 4A, 10V 5V @ 250µA 8.4nC @ 10V 423pF @ 25V 10V ±30V
GP1M008A025HG
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RFQ
751
In-stock
Global Power Technologies Group MOSFET N-CH 250V 8A TO220 - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 52W (Tc) N-Channel 250V 8A (Tc) 600 mOhm @ 4A, 10V 5V @ 250µA 8.4nC @ 10V 423pF @ 25V 10V ±30V
GP1M008A025FG
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RFQ
2,219
In-stock
Global Power Technologies Group MOSFET N-CH 250V 8A TO220F - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 17.3W (Tc) N-Channel 250V 8A (Tc) 600 mOhm @ 4A, 10V 5V @ 250µA 8.4nC @ 10V 423pF @ 25V 10V ±30V
GP1M008A025CG
RFQ
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RFQ
1,357
In-stock
Global Power Technologies Group MOSFET N-CH 250V 8A DPAK - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 52W (Tc) N-Channel 250V 8A (Tc) 600 mOhm @ 4A, 10V 5V @ 250µA 8.4nC @ 10V 423pF @ 25V 10V ±30V
TSM600N25ECH C5G
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RFQ
2,260
In-stock
Taiwan Semiconductor Corporation MOSFET N-CHANNEL 250V 8A TO251 - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251 (IPAK) 52W (Tc) N-Channel 250V 8A (Tc) 600 mOhm @ 4A, 10V 5V @ 250µA 8.4nC @ 10V 423pF @ 25V 10V ±30V