Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
STP18NM80
RFQ
VIEW
RFQ
3,888
In-stock
STMicroelectronics MOSFET N-CH 800V 17A TO-220 MDmesh™ Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220AB 190W (Tc) N-Channel - 800V 17A (Tc) 295 mOhm @ 8.5A, 10V 5V @ 250µA 70nC @ 10V 2070pF @ 50V 10V ±30V
IXTP50N20P
RFQ
VIEW
RFQ
1,514
In-stock
IXYS MOSFET N-CH 200V 50A TO-220 PolarHT™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 360W (Tc) N-Channel - 200V 50A (Tc) 60 mOhm @ 50A, 10V 5V @ 250µA 70nC @ 10V 2720pF @ 25V 10V ±20V