Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTH3N200P3HV
RFQ
VIEW
RFQ
686
In-stock
IXYS MOSFET N-CH 2000V 3A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 520W (Tc) N-Channel - 2000V 3A (Tc) 8 Ohm @ 1.5A, 10V 5V @ 250µA 70nC @ 10V 1860pF @ 25V 10V ±20V
FQH8N100C
RFQ
VIEW
RFQ
2,373
In-stock
ON Semiconductor MOSFET N-CH 1000V 8A TO-247 QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 225W (Tc) N-Channel - 1000V 8A (Tc) 1.45 Ohm @ 4A, 10V 5V @ 250µA 70nC @ 10V 3220pF @ 25V 10V ±30V
STW50N65DM2AG
RFQ
VIEW
RFQ
2,823
In-stock
STMicroelectronics MOSFET N-CH 650V 28A Automotive, AEC-Q101, MDmesh™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 300W (Tc) N-Channel - 650V 28A (Tc) 87 mOhm @ 19A, 10V 5V @ 250µA 70nC @ 10V 3200pF @ 100V 10V ±25V
STW48N60DM2
RFQ
VIEW
RFQ
2,597
In-stock
STMicroelectronics MOSFET N-CH 600V 40A MDmesh™ DM2 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 300W (Tc) N-Channel - 600V 40A (Tc) 79 mOhm @ 20A, 10V 5V @ 250µA 70nC @ 10V 3250pF @ 100V 10V ±25V