Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Diodes Incorporated MOSFET N-CHANNEL 950V ITO220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab ITO-220AB 30W (Tc) N-Channel 950V - 7 Ohm @ 1A, 10V 5V @ 250µA 7.9nC @ 10V 470pF @ 25V 10V ±30V
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Diodes Incorporated MOSFET N-CH 950V 2.5A TO220AB - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 125W (Tc) N-Channel 950V 2.5A (Tc) 7 Ohm @ 1A, 10V 5V @ 250µA 7.9nC @ 10V 470pF @ 25V 10V ±30V
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Diodes Incorporated MOSFET N-CH 900V 2.5A TO220AB - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 125W (Tc) N-Channel 900V 2.5A (Tc) 7 Ohm @ 1A, 10V 5V @ 250µA 7.9nC @ 10V 470pF @ 25V 10V ±30V
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1,395
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Diodes Incorporated MOSFET N-CH 900V 2.5A ITO220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab ITO-220AB 30W (Tc) N-Channel 900V 2.5A (Tc) 7 Ohm @ 1A, 10V 5V @ 250µA 7.9nC @ 10V 470pF @ 25V 10V ±30V