Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IRFP22N60K
RFQ
VIEW
RFQ
3,475
In-stock
Vishay Siliconix MOSFET N-CH 600V 22A TO-247AC - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 370W (Tc) N-Channel 600V 22A (Tc) 280 mOhm @ 13A, 10V 5V @ 250µA 150nC @ 10V 3570pF @ 25V 10V ±30V
STW30N65M5
RFQ
VIEW
RFQ
2,102
In-stock
STMicroelectronics MOSFET N-CH 650V 22A TO-247 MDmesh™ V Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 140W (Tc) N-Channel 650V 22A (Tc) 139 mOhm @ 11A, 10V 5V @ 250µA 64nC @ 10V 2880pF @ 100V 10V ±25V
IRFP22N60KPBF
RFQ
VIEW
RFQ
3,550
In-stock
Vishay Siliconix MOSFET N-CH 600V 22A TO-247AC - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 370W (Tc) N-Channel 600V 22A (Tc) 280 mOhm @ 13A, 10V 5V @ 250µA 150nC @ 10V 3570pF @ 25V 10V ±30V