Supplier Device Package :
Power Dissipation (Max) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
STW34NB20
RFQ
VIEW
RFQ
907
In-stock
STMicroelectronics MOSFET N-CH 200V 34A TO-247 PowerMESH™ Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247-3 180W (Tc) N-Channel - 200V 34A (Tc) 75 mOhm @ 17A, 10V 5V @ 250µA 80nC @ 10V 3300pF @ 25V 10V ±30V
FQA34N20
RFQ
VIEW
RFQ
708
In-stock
ON Semiconductor MOSFET N-CH 200V 34A TO-3P QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 210W (Tc) N-Channel - 200V 34A (Tc) 75 mOhm @ 17A, 10V 5V @ 250µA 78nC @ 10V 3100pF @ 25V 10V ±30V