Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRFSL4229PBF
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RFQ
2,028
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Infineon Technologies MOSFET N-CH 250V 45A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -40°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 330W (Tc) N-Channel - 250V 45A (Tc) 48 mOhm @ 26A, 10V 5V @ 250µA 110nC @ 10V 4560pF @ 25V 10V ±30V
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RFQ
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RFQ
2,825
In-stock
ON Semiconductor MOSFET N-CH 250V 24A TO-3PF QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole SC-94 TO-3PF 108W (Tc) N-Channel - 250V 24A (Tc) 70 mOhm @ 12A, 10V 5V @ 250µA 110nC @ 10V 4000pF @ 25V 10V ±30V
IRFB4229PBF
RFQ
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RFQ
2,963
In-stock
Infineon Technologies MOSFET N-CH 250V 46A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -40°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 330W (Tc) N-Channel - 250V 46A (Tc) 46 mOhm @ 26A, 10V 5V @ 250µA 110nC @ 10V 4560pF @ 25V 10V ±30V
IRFS4229PBF
RFQ
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RFQ
3,795
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Infineon Technologies MOSFET N-CH 250V 45A D2PAK HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -40°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 330W (Tc) N-Channel - 250V 45A (Tc) 48 mOhm @ 26A, 10V 5V @ 250µA 110nC @ 10V 4560pF @ 25V 10V ±30V
FQA40N25
RFQ
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RFQ
2,204
In-stock
ON Semiconductor MOSFET N-CH 250V 40A TO-3P QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3PN 280W (Tc) N-Channel - 250V 40A (Tc) 70 mOhm @ 20A, 10V 5V @ 250µA 110nC @ 10V 4000pF @ 25V 10V ±30V
IRFP4229PBF
RFQ
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RFQ
1,039
In-stock
Infineon Technologies MOSFET N-CH 250V 44A TO-247AC HEXFET® Active Tube MOSFET (Metal Oxide) -40°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 310W (Tc) N-Channel - 250V 44A (Tc) 46 mOhm @ 26A, 10V 5V @ 250µA 110nC @ 10V 4560pF @ 25V 10V ±30V
IRFI4229PBF
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RFQ
1,098
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Infineon Technologies MOSFET N-CH 250V 19A TO-220FP HEXFET® Active Tube MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 46W (Tc) N-Channel - 250V 19A (Tc) 46 mOhm @ 11A, 10V 5V @ 250µA 110nC @ 10V 4480pF @ 25V 10V ±30V
IRFS4229TRLPBF
RFQ
VIEW
RFQ
3,262
In-stock
Infineon Technologies MOSFET N-CH 250V 45A D2PAK HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -40°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 330W (Tc) N-Channel - 250V 45A (Tc) 48 mOhm @ 26A, 10V 5V @ 250µA 110nC @ 10V 4560pF @ 25V 10V ±30V
IRFS4229TRLPBF
RFQ
VIEW
RFQ
3,608
In-stock
Infineon Technologies MOSFET N-CH 250V 45A D2PAK HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -40°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 330W (Tc) N-Channel - 250V 45A (Tc) 48 mOhm @ 26A, 10V 5V @ 250µA 110nC @ 10V 4560pF @ 25V 10V ±30V
IRFS4229TRLPBF
RFQ
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RFQ
3,034
In-stock
Infineon Technologies MOSFET N-CH 250V 45A D2PAK HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -40°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 330W (Tc) N-Channel - 250V 45A (Tc) 48 mOhm @ 26A, 10V 5V @ 250µA 110nC @ 10V 4560pF @ 25V 10V ±30V