Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRFP4332-203PBF
RFQ
VIEW
RFQ
3,818
In-stock
Infineon Technologies MOSFET N-CH 250V 57A TO247AC HEXFET® Obsolete Tube MOSFET (Metal Oxide) -40°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 360W (Tc) N-Channel - 250V 57A (Tc) 33 mOhm @ 35A, 10V 5V @ 250µA 150nC @ 10V 5860pF @ 25V 10V ±30V
IRFSL4229PBF
RFQ
VIEW
RFQ
2,028
In-stock
Infineon Technologies MOSFET N-CH 250V 45A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -40°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 330W (Tc) N-Channel - 250V 45A (Tc) 48 mOhm @ 26A, 10V 5V @ 250µA 110nC @ 10V 4560pF @ 25V 10V ±30V
IRFP4232PBF
RFQ
VIEW
RFQ
819
In-stock
Infineon Technologies MOSFET N-CH 250V 60A TO-247AC HEXFET® Obsolete Bulk MOSFET (Metal Oxide) -40°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 430W (Tc) N-Channel - 250V 60A (Tc) 35.7 mOhm @ 42A, 10V 5V @ 250µA 240nC @ 10V 7290pF @ 25V 10V ±20V
IRFB4332PBF
RFQ
VIEW
RFQ
2,247
In-stock
Infineon Technologies MOSFET N-CH 250V 60A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -40°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 390W (Tc) N-Channel - 250V 60A (Tc) 33 mOhm @ 35A, 10V 5V @ 250µA 150nC @ 10V 5860pF @ 25V 10V ±30V
IRFB4229PBF
RFQ
VIEW
RFQ
2,963
In-stock
Infineon Technologies MOSFET N-CH 250V 46A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -40°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 330W (Tc) N-Channel - 250V 46A (Tc) 46 mOhm @ 26A, 10V 5V @ 250µA 110nC @ 10V 4560pF @ 25V 10V ±30V
IRFS4229PBF
RFQ
VIEW
RFQ
3,795
In-stock
Infineon Technologies MOSFET N-CH 250V 45A D2PAK HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -40°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 330W (Tc) N-Channel - 250V 45A (Tc) 48 mOhm @ 26A, 10V 5V @ 250µA 110nC @ 10V 4560pF @ 25V 10V ±30V
IRFP4332PBF
RFQ
VIEW
RFQ
981
In-stock
Infineon Technologies MOSFET N-CH 250V 57A TO-247AC HEXFET® Active Bulk MOSFET (Metal Oxide) -40°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 360W (Tc) N-Channel - 250V 57A (Tc) 33 mOhm @ 35A, 10V 5V @ 250µA 150nC @ 10V 5860pF @ 25V 10V ±30V
IRFP4229PBF
RFQ
VIEW
RFQ
1,039
In-stock
Infineon Technologies MOSFET N-CH 250V 44A TO-247AC HEXFET® Active Tube MOSFET (Metal Oxide) -40°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 310W (Tc) N-Channel - 250V 44A (Tc) 46 mOhm @ 26A, 10V 5V @ 250µA 110nC @ 10V 4560pF @ 25V 10V ±30V
IRFS4229TRLPBF
RFQ
VIEW
RFQ
3,262
In-stock
Infineon Technologies MOSFET N-CH 250V 45A D2PAK HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -40°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 330W (Tc) N-Channel - 250V 45A (Tc) 48 mOhm @ 26A, 10V 5V @ 250µA 110nC @ 10V 4560pF @ 25V 10V ±30V
IRFS4229TRLPBF
RFQ
VIEW
RFQ
3,608
In-stock
Infineon Technologies MOSFET N-CH 250V 45A D2PAK HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -40°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 330W (Tc) N-Channel - 250V 45A (Tc) 48 mOhm @ 26A, 10V 5V @ 250µA 110nC @ 10V 4560pF @ 25V 10V ±30V
IRFS4229TRLPBF
RFQ
VIEW
RFQ
3,034
In-stock
Infineon Technologies MOSFET N-CH 250V 45A D2PAK HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -40°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 330W (Tc) N-Channel - 250V 45A (Tc) 48 mOhm @ 26A, 10V 5V @ 250µA 110nC @ 10V 4560pF @ 25V 10V ±30V