Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Infineon Technologies MOSFET N-CH 250V 60A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -40°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 390W (Tc) N-Channel - 250V 60A (Tc) 33 mOhm @ 35A, 10V 5V @ 250µA 150nC @ 10V 5860pF @ 25V 10V ±30V
IRFB4229PBF
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2,963
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Infineon Technologies MOSFET N-CH 250V 46A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -40°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 330W (Tc) N-Channel - 250V 46A (Tc) 46 mOhm @ 26A, 10V 5V @ 250µA 110nC @ 10V 4560pF @ 25V 10V ±30V
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ON Semiconductor MOSFET N-CH 250V 25.5A TO-220 QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 180W (Tc) N-Channel - 250V 25.5A (Tc) 110 mOhm @ 12.75A, 10V 5V @ 250µA 65nC @ 10V 2450pF @ 25V 10V ±30V
IRFI4229PBF
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Infineon Technologies MOSFET N-CH 250V 19A TO-220FP HEXFET® Active Tube MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 46W (Tc) N-Channel - 250V 19A (Tc) 46 mOhm @ 11A, 10V 5V @ 250µA 110nC @ 10V 4480pF @ 25V 10V ±30V