Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
STD3NM50T4
RFQ
VIEW
RFQ
1,649
In-stock
STMicroelectronics MOSFET N-CH 550V 3A DPAK MDmesh™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 46W (Tc) N-Channel - 550V 3A (Tc) 3 Ohm @ 1.5A, 10V 5V @ 250µA 5.5nC @ 10V 140pF @ 25V 10V ±30V
STD18N55M5
RFQ
VIEW
RFQ
1,209
In-stock
STMicroelectronics MOSFET N-CH 550V 13A DPAK MDmesh™ V Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 110W (Tc) N-Channel - 550V 16A (Tc) 192 mOhm @ 8A, 10V 5V @ 250µA 31nC @ 10V 1260pF @ 100V 10V ±25V
STD18N55M5
RFQ
VIEW
RFQ
3,276
In-stock
STMicroelectronics MOSFET N-CH 550V 13A DPAK MDmesh™ V Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 110W (Tc) N-Channel - 550V 16A (Tc) 192 mOhm @ 8A, 10V 5V @ 250µA 31nC @ 10V 1260pF @ 100V 10V ±25V
STD18N55M5
RFQ
VIEW
RFQ
2,593
In-stock
STMicroelectronics MOSFET N-CH 550V 13A DPAK MDmesh™ V Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 110W (Tc) N-Channel - 550V 16A (Tc) 192 mOhm @ 8A, 10V 5V @ 250µA 31nC @ 10V 1260pF @ 100V 10V ±25V