- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
2,150
In-stock
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ON Semiconductor | MOSFET N-CH 500V 20A TO-3P | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P | 277W (Tc) | N-Channel | - | 500V | 20A (Tc) | 265 mOhm @ 10A, 10V | 5V @ 250µA | 55nC @ 10V | 3290pF @ 25V | 10V | ±30V | |||
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|
VIEW |
715
In-stock
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ON Semiconductor | MOSFET N-CH 500V 13.4A TO-3P | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P | 190W (Tc) | N-Channel | - | 500V | 13.4A (Tc) | 430 mOhm @ 6.7A, 10V | 5V @ 250µA | 60nC @ 10V | 2300pF @ 25V | 10V | ±30V | |||
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|
VIEW |
2,518
In-stock
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ON Semiconductor | MOSFET N-CH 500V 9.6A TO-3P | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P | 160W (Tc) | N-Channel | - | 500V | 9.6A (Tc) | 730 mOhm @ 4.8A, 10V | 5V @ 250µA | 36nC @ 10V | 1450pF @ 25V | 10V | ±30V | |||
