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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IXTA34N65X2	RFQ VIEW	PDF RFQ	2,275 In-stock	IXYS	MOSFET N-CH		-	Active	-	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AA	540W (Tc)	N-Channel	650V	34A (Tc)	96 mOhm @ 17A, 10V	5V @ 250µA	54nC @ 10V	3000pF @ 25V	10V	±30V
	IXTA24N65X2	RFQ VIEW	PDF RFQ	2,821 In-stock	IXYS	MOSFET N-CH		-	Active	-	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AA	390W (Tc)	N-Channel	650V	24A (Tc)	145 mOhm @ 12A, 10V	5V @ 250µA	36nC @ 10V	2060pF @ 25V	10V	±30V
	IXTA12N65X2	RFQ VIEW	PDF RFQ	1,365 In-stock	IXYS	MOSFET N-CH 650V 12A TO-263		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab) Variant	TO-263AA	180W (Tc)	N-Channel	650V	12A (Tc)	300 mOhm @ 6A, 10V	5V @ 250µA	17nC @ 10V	1100pF @ 25V	10V	±30V
	IXFA12N65X2	RFQ VIEW	PDF RFQ	2,753 In-stock	IXYS	MOSFET N-CH		HiPerFET™	Active	-	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AA	180W (Tc)	N-Channel	650V	12A (Tc)	310 mOhm @ 6A, 10V	5V @ 250µA	18.5nC @ 10V	1134pF @ 25V	10V	±30V

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