Drain to Source Voltage (Vdss) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SIHF16N50C-E3
RFQ
VIEW
RFQ
3,861
In-stock
Vishay Siliconix MOSFET N-CH 500V 16A TO-220 - Active Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220 Full Pack 38W (Tc) N-Channel 500V 16A (Tc) 380 mOhm @ 8A, 10V 5V @ 250µA 68nC @ 10V 1900pF @ 25V 10V ±30V
IRFPS3815PBF
RFQ
VIEW
RFQ
3,995
In-stock
Infineon Technologies MOSFET N-CH 150V 105A SUPER247 HEXFET® Active Bulk MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-274AA SUPER-247 (TO-274AA) 441W (Tc) N-Channel 150V 105A (Tc) 15 mOhm @ 63A, 10V 5V @ 250µA 390nC @ 10V 6810pF @ 25V 10V ±30V
SIHF6N40D-E3
RFQ
VIEW
RFQ
2,159
In-stock
Vishay Siliconix MOSFET N-CH 400V 6A TO-220 FPAK - Active Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220 Full Pack 30W (Tc) N-Channel 400V 6A (Tc) 1 Ohm @ 3A, 10V 5V @ 250µA 18nC @ 10V 311pF @ 100V 10V ±30V
IRFPS3810PBF
RFQ
VIEW
RFQ
3,285
In-stock
Infineon Technologies MOSFET N-CH 100V 170A SUPER247 HEXFET® Active Bulk MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-274AA SUPER-247 (TO-274AA) 580W (Tc) N-Channel 100V 170A (Tc) 9 mOhm @ 100A, 10V 5V @ 250µA 390nC @ 10V 6790pF @ 25V 10V ±30V
IXTT10P50
RFQ
VIEW
RFQ
1,942
In-stock
IXYS MOSFET P-CH 500V 10A TO-268 - Active Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268 300W (Tc) P-Channel 500V 10A (Tc) 900 mOhm @ 5A, 10V 5V @ 250µA 160nC @ 10V 4700pF @ 25V 10V ±20V
IRFP4332PBF
RFQ
VIEW
RFQ
981
In-stock
Infineon Technologies MOSFET N-CH 250V 57A TO-247AC HEXFET® Active Bulk MOSFET (Metal Oxide) -40°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 360W (Tc) N-Channel 250V 57A (Tc) 33 mOhm @ 35A, 10V 5V @ 250µA 150nC @ 10V 5860pF @ 25V 10V ±30V
SIHP18N50C-E3
RFQ
VIEW
RFQ
2,720
In-stock
Vishay Siliconix MOSFET N-CH 500V 18A TO220 - Active Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 223W (Tc) N-Channel 500V 18A (Tc) 270 mOhm @ 10A, 10V 5V @ 250µA 76nC @ 10V 2942pF @ 25V 10V ±30V
IRFP90N20DPBF
RFQ
VIEW
RFQ
3,501
In-stock
Infineon Technologies MOSFET N-CH 200V 94A TO-247AC HEXFET® Active Bulk MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 580W (Tc) N-Channel 200V 94A (Tc) 23 mOhm @ 56A, 10V 5V @ 250µA 270nC @ 10V 6040pF @ 25V 10V ±30V
IRFP4321PBF
RFQ
VIEW
RFQ
3,407
In-stock
Infineon Technologies MOSFET N-CH 150V 78A TO-247AC HEXFET® Active Bulk MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 310W (Tc) N-Channel 150V 78A (Tc) 15.5 mOhm @ 33A, 10V 5V @ 250µA 110nC @ 10V 4460pF @ 25V 10V ±30V
SIHG20N50C-E3
RFQ
VIEW
RFQ
3,545
In-stock
Vishay Siliconix MOSFET N-CH 500V 20A TO247 - Active Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AC 250W (Tc) N-Channel 500V 20A (Tc) 270 mOhm @ 10A, 10V 5V @ 250µA 76nC @ 10V 2942pF @ 25V 10V ±30V