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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	FDP8N50NZ	RFQ VIEW	PDF RFQ	2,397 In-stock	ON Semiconductor	MOSFET N-CH 500V TO-220AB-3		UniFET™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3	130W (Tc)	N-Channel	500V	8A (Tc)	850 mOhm @ 4A, 10V	5V @ 250µA	18nC @ 10V	735pF @ 25V	10V	±25V
	IRF730BPBF	RFQ VIEW	PDF RFQ	1,153 In-stock	Vishay Siliconix	MOSFET N-CH 400V 5.5A TO-220AB		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	104W (Tc)	N-Channel	400V	6A (Tc)	1 Ohm @ 3A, 10V	5V @ 250µA	18nC @ 10V	311pF @ 100V	10V	±30V
	STP7NM80	RFQ VIEW	PDF RFQ	2,366 In-stock	STMicroelectronics	MOSFET N-CH 800V 6.5A TO-220		MDmesh™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3	90W (Tc)	N-Channel	800V	6.5A (Tc)	1.05 Ohm @ 3.25A, 10V	5V @ 250µA	18nC @ 10V	620pF @ 25V	10V	±30V
	SIHP6N40D-GE3	RFQ VIEW	PDF RFQ	2,095 In-stock	Vishay Siliconix	MOSFET N-CH 400V 6A TO-220AB		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	104W (Tc)	N-Channel	400V	6A (Tc)	1 Ohm @ 3A, 10V	5V @ 250µA	18nC @ 10V	311pF @ 100V	10V	±30V
	SIHP6N40D-E3	RFQ VIEW	PDF RFQ	784 In-stock	Vishay Siliconix	MOSFET N-CH 400V 6A TO-220AB		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	104W (Tc)	N-Channel	400V	6A (Tc)	1 Ohm @ 3A, 10V	5V @ 250µA	18nC @ 10V	311pF @ 100V	10V	±30V

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