Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRFSL4228PBF
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2,473
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Infineon Technologies MOSFET N-CH 150V 83A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -40°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 330W (Tc) N-Channel - 150V 83A (Tc) 15 mOhm @ 33A, 10V 5V @ 250µA 107nC @ 10V 4530pF @ 25V 10V ±30V
IRFP4228PBF
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RFQ
3,843
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Infineon Technologies MOSFET N-CH 150V 78A TO-247AC HEXFET® Obsolete Bulk MOSFET (Metal Oxide) -40°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 310W (Tc) N-Channel - 150V 78A (Tc) 15.5 mOhm @ 33A, 10V 5V @ 250µA 107nC @ 10V 4530pF @ 25V 10V ±30V
IXTP60N20T
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RFQ
2,011
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IXYS MOSFET N-CH 200V 60A TO-220 Trench™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 500W (Tc) N-Channel - 200V 60A (Tc) 40 mOhm @ 30A, 10V 5V @ 250µA 73nC @ 10V 4530pF @ 25V 10V ±20V
IRFB4228PBF
RFQ
VIEW
RFQ
682
In-stock
Infineon Technologies MOSFET N-CH 150V 83A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -40°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 330W (Tc) N-Channel - 150V 83A (Tc) 15 mOhm @ 33A, 10V 5V @ 250µA 107nC @ 10V 4530pF @ 25V 10V ±30V