Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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DMG4N65CTI
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Diodes Incorporated MOSFET N-CH 650V 4A ITO-220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab ITO-220AB 8.35W (Ta) N-Channel - 650V 4A (Tc) 3 Ohm @ 2A, 10V 5V @ 250µA 13.5nC @ 10V 900pF @ 25V 10V ±30V
DMG4N65CT
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Diodes Incorporated MOSFET N CH 650V 4A TO220-3 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 2.19W (Ta) N-Channel - 650V 4A (Tc) 3 Ohm @ 2A, 10V 5V @ 250µA 13.5nC @ 10V 900pF @ 25V 10V ±30V
STP11NM60FD
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721
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STMicroelectronics MOSFET N-CH 600V 11A TO-220 FDmesh™ Active Tube MOSFET (Metal Oxide) - Through Hole TO-220-3 TO-220AB 160W (Tc) N-Channel - 600V 11A (Tc) 450 mOhm @ 5.5A, 10V 5V @ 250µA 40nC @ 10V 900pF @ 25V 10V ±30V
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Diodes Incorporated MOSFET N-CH 650V 4A ITO-220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab ITO-220AB 8.35W (Ta) N-Channel - 650V 4A (Tc) 3 Ohm @ 2A, 10V 5V @ 250µA 13.5nC @ 10V 900pF @ 25V 10V ±30V
STP11NM60FDFP
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STMicroelectronics MOSFET N-CH 600V 11A TO-220FP FDmesh™ Active Tube MOSFET (Metal Oxide) - Through Hole TO-220-3 Full Pack TO-220FP 35W (Tc) N-Channel - 600V 11A (Tc) 450 mOhm @ 5.5A, 10V 5V @ 250µA 40nC @ 10V 900pF @ 25V 10V ±30V