- Series :
- Part Status :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
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7 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
3,352
In-stock
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STMicroelectronics | MOSFET N-CH 600V 30A TO-247 | MDmesh™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 313W (Tc) | N-Channel | - | 600V | 30A (Tc) | 135 mOhm @ 13A, 10V | 5V @ 250µA | 102nC @ 10V | 2900pF @ 25V | 10V | ±30V | |||
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VIEW |
2,177
In-stock
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STMicroelectronics | MOSFET N-CH 800V 11A TO-247 | PowerMESH™ | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 190W (Tc) | N-Channel | - | 800V | 11A (Tc) | 800 mOhm @ 5.5A, 10V | 5V @ 250µA | 70nC @ 10V | 2900pF @ 25V | 10V | ±30V | |||
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VIEW |
1,696
In-stock
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STMicroelectronics | MOSFET N-CH 1KV 7.3A TO-247 | PowerMESH™ | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 190W (Tc) | N-Channel | - | 1000V | 7.3A (Tc) | 1.45 Ohm @ 3.6A, 10V | 5V @ 250µA | 95nC @ 10V | 2900pF @ 25V | 10V | ±30V | |||
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VIEW |
1,211
In-stock
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Infineon Technologies | MOSFET N-CH 200V 43A TO-262-3 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | - | N-Channel | - | 200V | 43A (Tc) | 54 mOhm @ 26A, 10V | 5V @ 250µA | 91nC @ 10V | 2900pF @ 25V | - | - | |||
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VIEW |
3,522
In-stock
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ON Semiconductor | MOSFET N-CH 200V 52A TO-220F | UniFET™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 38.5W (Tc) | N-Channel | - | 200V | 52A (Tc) | 49 mOhm @ 26A, 10V | 5V @ 250µA | 63nC @ 10V | 2900pF @ 25V | 10V | ±30V | |||
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VIEW |
760
In-stock
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Infineon Technologies | MOSFET N-CH 200V 43A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 3.8W (Ta), 300W (Tc) | N-Channel | - | 200V | 43A (Tc) | 54 mOhm @ 26A, 10V | 5V @ 250µA | 91nC @ 10V | 2900pF @ 25V | 10V | ±20V | |||
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VIEW |
624
In-stock
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ON Semiconductor | MOSFET N-CH 200V 52A TO-220 | UniFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 357W (Tc) | N-Channel | - | 200V | 52A (Tc) | 49 mOhm @ 26A, 10V | 5V @ 250µA | 63nC @ 10V | 2900pF @ 25V | 10V | ±30V | |||
