Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXYS MOSFET N-CH Polar™ Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole i4-Pac™-5 (3 Leads) ISOPLUS i4-PAC™ 215W (Tc) N-Channel - 2000V 4A (Tc) 4.2 Ohm @ 3A, 10V 5V @ 250µA 143nC @ 10V 3700pF @ 25V 10V ±20V
IXTX6N200P3HV
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3,705
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IXYS 2000V TO 3000V POLAR3 POWER MOSF - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 Variant TO-247PLUS-HV 960W (Tc) N-Channel - 2000V 6A (Tc) 4 Ohm @ 3A, 10V 5V @ 250µA 143nC @ 10V 3700pF @ 25V 10V ±20V
STW45NM50
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1,663
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STMicroelectronics MOSFET N-CH 500V 45A TO-247 MDmesh™ Active Tube MOSFET (Metal Oxide) -65°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 417W (Tc) N-Channel - 500V 45A (Tc) 100 mOhm @ 22.5A, 10V 5V @ 250µA 117nC @ 10V 3700pF @ 25V 10V ±30V