Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IRFB16N50K
RFQ
VIEW
RFQ
1,498
In-stock
Vishay Siliconix MOSFET N-CH 500V 17A TO-220AB - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 280W (Tc) N-Channel - 500V 17A (Tc) 350 mOhm @ 10A, 10V 5V @ 250µA 89nC @ 10V 2210pF @ 25V 10V ±30V
IRFIB8N50K
RFQ
VIEW
RFQ
1,722
In-stock
Vishay Siliconix MOSFET N-CH 500V 6.7A TO220FP - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 45W (Tc) N-Channel - 500V 6.7A (Tc) 350 mOhm @ 4A, 10V 5V @ 250µA 89nC @ 10V 2160pF @ 25V 10V ±30V
IRFIB8N50KPBF
RFQ
VIEW
RFQ
3,298
In-stock
Vishay Siliconix MOSFET N-CH 500V 6.7A TO220FP - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 45W (Tc) N-Channel - 500V 6.7A (Tc) 350 mOhm @ 4A, 10V 5V @ 250µA 89nC @ 10V 2160pF @ 25V 10V ±30V
IRFB16N50KPBF
RFQ
VIEW
RFQ
1,267
In-stock
Vishay Siliconix MOSFET N-CH 500V 17A TO-220AB - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 280W (Tc) N-Channel - 500V 17A (Tc) 350 mOhm @ 10A, 10V 5V @ 250µA 89nC @ 10V 2210pF @ 25V 10V ±30V
IRFB52N15DPBF
RFQ
VIEW
RFQ
3,674
In-stock
Infineon Technologies MOSFET N-CH 150V 51A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 3.8W (Ta), 230W (Tc) N-Channel - 150V 51A (Tc) 32 mOhm @ 36A, 10V 5V @ 250µA 89nC @ 10V 2770pF @ 25V 10V ±30V