Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTH96N20P
RFQ
VIEW
RFQ
674
In-stock
IXYS MOSFET N-CH 200V 96A TO-247 PolarHT™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 600W (Tc) N-Channel - 200V 96A (Tc) 24 mOhm @ 500mA, 10V 5V @ 250µA 145nC @ 10V 4800pF @ 25V 10V ±20V
IXTQ96N20P
RFQ
VIEW
RFQ
2,311
In-stock
IXYS MOSFET N-CH 200V 96A TO-3P PolarHT™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 600W (Tc) N-Channel - 200V 96A (Tc) 24 mOhm @ 500mA, 10V 5V @ 250µA 145nC @ 10V 4800pF @ 25V 10V ±20V
FQA24N60
RFQ
VIEW
RFQ
683
In-stock
ON Semiconductor MOSFET N-CH 600V 23.5A TO-3P QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3PN 310W (Tc) N-Channel - 600V 23.5A (Tc) 240 mOhm @ 11.8A, 10V 5V @ 250µA 145nC @ 10V 5500pF @ 25V 10V ±30V
STW43NM60ND
RFQ
VIEW
RFQ
2,794
In-stock
STMicroelectronics MOSFET N-CH 600V 35A TO-247 FDmesh™ Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247-3 255W (Tc) N-Channel - 600V 35A (Tc) 88 mOhm @ 17.5A, 10V 5V @ 250µA 145nC @ 10V 4300pF @ 50V 10V ±25V
FCP104N60F
RFQ
VIEW
RFQ
3,960
In-stock
ON Semiconductor MOSFET N-CH 600V TO-220 HiPerFET™, Polar™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 357W (Tc) N-Channel - 600V 37A (Tc) 104 mOhm @ 18.5A, 10V 5V @ 250µA 145nC @ 10V 6130pF @ 25V 10V ±20V