Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTK150N15P
RFQ
VIEW
RFQ
1,790
In-stock
IXYS MOSFET N-CH 150V 150A TO-264 PolarHT™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-264-3, TO-264AA TO-264 (IXTK) 714W (Tc) N-Channel 150V 150A (Tc) 13 mOhm @ 500mA, 10V 5V @ 250µA 190nC @ 10V 5800pF @ 25V 10V ±20V
IXTQ150N15P
RFQ
VIEW
RFQ
2,293
In-stock
IXYS MOSFET N-CH 150V 150A TO-3P PolarHT™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 714W (Tc) N-Channel 150V 150A (Tc) 13 mOhm @ 500mA, 10V 5V @ 250µA 190nC @ 10V 5800pF @ 25V 10V ±20V
STW55NM60ND
RFQ
VIEW
RFQ
2,435
In-stock
STMicroelectronics MOSFET N-CH 600V 51A TO-247 FDmesh™ II Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247-3 350W (Tc) N-Channel 600V 51A (Tc) 60 mOhm @ 25.5A, 10V 5V @ 250µA 190nC @ 10V 5800pF @ 50V 10V ±25V
IRFP32N50K
RFQ
VIEW
RFQ
1,386
In-stock
Vishay Siliconix MOSFET N-CH 500V 32A TO-247AC - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 460W (Tc) N-Channel 500V 32A (Tc) 160 mOhm @ 32A, 10V 5V @ 250µA 190nC @ 10V 5280pF @ 25V 10V ±30V
IRFP32N50KPBF
RFQ
VIEW
RFQ
2,386
In-stock
Vishay Siliconix MOSFET N-CH 500V 32A TO-247AC - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 460W (Tc) N-Channel 500V 32A (Tc) 160 mOhm @ 32A, 10V 5V @ 250µA 190nC @ 10V 5280pF @ 25V 10V ±30V