Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTQ200N06P
RFQ
VIEW
RFQ
2,225
In-stock
IXYS MOSFET N-CH 60V 200A TO-3P PolarHT™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 714W (Tc) N-Channel - 60V 200A (Tc) 5 mOhm @ 400A, 15V 5V @ 250µA 200nC @ 10V 5400pF @ 25V 10V ±20V
FQA65N20
RFQ
VIEW
RFQ
1,370
In-stock
ON Semiconductor MOSFET N-CH 200V 65A TO-3P QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3PN 310W (Tc) N-Channel - 200V 65A (Tc) 32 mOhm @ 32.5A, 10V 5V @ 250µA 200nC @ 10V 7900pF @ 25V 10V ±30V
FQL40N50F
RFQ
VIEW
RFQ
2,946
In-stock
ON Semiconductor MOSFET N-CH 500V 40A TO-264 FRFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264 460W (Tc) N-Channel - 500V 40A (Tc) 110 mOhm @ 20A, 10V 5V @ 250µA 200nC @ 10V 7500pF @ 25V 10V ±30V
FQL40N50
RFQ
VIEW
RFQ
2,769
In-stock
ON Semiconductor MOSFET N-CH 500V 40A TO-264 QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264 460W (Tc) N-Channel - 500V 40A (Tc) 110 mOhm @ 20A, 10V 5V @ 250µA 200nC @ 10V 7500pF @ 25V 10V ±30V
STW77N65M5
RFQ
VIEW
RFQ
1,548
In-stock
STMicroelectronics MOSFET N-CH 650V 69A TO-247 MDmesh™ V Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247-3 400W (Tc) N-Channel - 650V 69A (Tc) 38 mOhm @ 34.5A, 10V 5V @ 250µA 200nC @ 10V 9800pF @ 100V 10V 25V