Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
FCU5N60TU
RFQ
VIEW
RFQ
1,659
In-stock
ON Semiconductor MOSFET N-CH 600V 4.6A I-PAK SuperFET™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 54W (Tc) N-Channel - 600V 4.6A (Tc) 950 mOhm @ 2.3A, 10V 5V @ 250µA 16nC @ 10V 600pF @ 25V 10V ±30V
STF12N50DM2
RFQ
VIEW
RFQ
2,671
In-stock
STMicroelectronics N-CHANNEL 500 V, 0.299 OHM TYP., MDmesh™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 25W (Tc) N-Channel - 500V 11A (Tc) 350 mOhm @ 5.5A, 10V 5V @ 250µA 16nC @ 10V 628pF @ 100V 10V ±25V