Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FQPF4N60
RFQ
VIEW
RFQ
3,233
In-stock
ON Semiconductor MOSFET N-CH 600V 2.6A TO-220F QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 36W (Tc) N-Channel - 600V 2.6A (Tc) 2.2 Ohm @ 1.3A, 10V 5V @ 250µA 20nC @ 10V 670pF @ 25V 10V ±30V
FQU4N50TU
RFQ
VIEW
RFQ
2,138
In-stock
ON Semiconductor MOSFET N-CH 500V 2.6A IPAK QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 2.5W (Ta), 45W (Tc) N-Channel - 500V 2.6A (Tc) 2.7 Ohm @ 1.3A, 10V 5V @ 250µA 13nC @ 10V 460pF @ 25V 10V ±30V
STW3N170
RFQ
VIEW
RFQ
3,444
In-stock
STMicroelectronics MOSFET N-CH 1700V 2.6A TO247-3 PowerMESH™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 160mW N-Channel - 1700V 2.6A (Tc) 13 Ohm @ 1.3A, 10V 5V @ 250µA 44nC @ 10V 1100pF @ 100V 10V ±30V
FQU4N50TU-WS
RFQ
VIEW
RFQ
2,615
In-stock
ON Semiconductor MOSFET N-CH 500V 2.6A IPAK QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 2.5W (Ta), 45W (Tc) N-Channel - 500V 2.6A (Tc) 2.7 Ohm @ 1.3A, 10V 5V @ 250µA 13nC @ 10V 460pF @ 25V 10V ±30V
STFW3N170
RFQ
VIEW
RFQ
3,192
In-stock
STMicroelectronics MOSFET N-CH 1700V 2.6A PowerMESH™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3 Full Pack TO-3PF 63W (Tc) N-Channel - 1700V 2.6A (Tc) 13 Ohm @ 1.3A, 10V 5V @ 250µA 44nC @ 10V 1100pF @ 100V 10V ±30V