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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IXTH24N65X2	RFQ VIEW	PDF RFQ	1,893 In-stock	IXYS	MOSFET N-CH		-	Active	-	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247	390W (Tc)	N-Channel	650V	24A (Tc)	145 mOhm @ 12A, 10V	5V @ 250µA	36nC @ 10V	2060pF @ 25V	10V	±30V
	SIHG32N50D-E3	RFQ VIEW	PDF RFQ	2,114 In-stock	Vishay Siliconix	MOSFET N-CH 500V 30A TO-247AC		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AC	390W (Tc)	N-Channel	500V	30A (Tc)	150 mOhm @ 16A, 10V	5V @ 250µA	96nC @ 10V	2550pF @ 100V	10V	±30V
	IXTP24N65X2	RFQ VIEW	PDF RFQ	3,072 In-stock	IXYS	MOSFET N-CH		-	Active	-	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	390W (Tc)	N-Channel	650V	24A (Tc)	145 mOhm @ 12A, 10V	5V @ 250µA	36nC @ 10V	2060pF @ 25V	10V	±30V
	IRFB4332PBF	RFQ VIEW	PDF RFQ	2,247 In-stock	Infineon Technologies	MOSFET N-CH 250V 60A TO-220AB		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-40°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	390W (Tc)	N-Channel	250V	60A (Tc)	33 mOhm @ 35A, 10V	5V @ 250µA	150nC @ 10V	5860pF @ 25V	10V	±30V
	SIHG32N50D-GE3	RFQ VIEW	PDF RFQ	1,539 In-stock	Vishay Siliconix	MOSFET N-CH 500V 30A TO-247AC		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AC	390W (Tc)	N-Channel	500V	30A (Tc)	150 mOhm @ 16A, 10V	5V @ 250µA	96nC @ 10V	2550pF @ 100V	10V	±30V

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