Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FDA75N28
RFQ
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RFQ
1,918
In-stock
ON Semiconductor MOSFET N-CH 280V 75A TO-3P UniFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3PN 520W (Tc) N-Channel - 280V 75A (Tc) 41 mOhm @ 37.5A, 10V 5V @ 250µA 144nC @ 10V 6700pF @ 25V 10V ±30V
IRFP4768PBF
RFQ
VIEW
RFQ
1,147
In-stock
Infineon Technologies MOSFET N-CH 250V 93A TO-247AC HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 520W (Tc) N-Channel - 250V 93A (Tc) 17.5 mOhm @ 56A, 10V 5V @ 250µA 270nC @ 10V 10880pF @ 50V 10V ±20V
IXTH2N300P3HV
RFQ
VIEW
RFQ
3,999
In-stock
IXYS MOSFET N-CH 3000V 2A TO247HV - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247HV 520W (Tc) N-Channel - 3000V 2A (Tc) 21 Ohm @ 1A, 10V 5V @ 250µA 73nC @ 10V 1890pF @ 25V 10V ±20V
IXTH3N200P3HV
RFQ
VIEW
RFQ
686
In-stock
IXYS MOSFET N-CH 2000V 3A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 520W (Tc) N-Channel - 2000V 3A (Tc) 8 Ohm @ 1.5A, 10V 5V @ 250µA 70nC @ 10V 1860pF @ 25V 10V ±20V
IRFP4668PBF
RFQ
VIEW
RFQ
2,368
In-stock
Infineon Technologies MOSFET N-CH 200V 130A TO-247AC HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 520W (Tc) N-Channel - 200V 130A (Tc) 9.7 mOhm @ 81A, 10V 5V @ 250µA 241nC @ 10V 10720pF @ 50V 10V ±30V