Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
Default Photo
RFQ
VIEW
RFQ
763
In-stock
IXYS MOSFET N-CH Polar™ Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole i4-Pac™-5 (3 Leads) ISOPLUS i4-PAC™ 160W (Tc) N-Channel - 3000V 1.6A (Tc) 21 Ohm @ 1A, 10V 5V @ 250µA 73nC @ 10V 1890pF @ 25V 10V ±20V
Default Photo
RFQ
VIEW
RFQ
1,972
In-stock
IXYS MOSFET N-CH Polar™ Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole i4-Pac™-5 (3 Leads) ISOPLUS i4-PAC™ 215W (Tc) N-Channel - 2000V 4A (Tc) 4.2 Ohm @ 3A, 10V 5V @ 250µA 143nC @ 10V 3700pF @ 25V 10V ±20V
IXTQ170N10P
RFQ
VIEW
RFQ
1,092
In-stock
IXYS MOSFET N-CH 100V 170A TO-3P Polar™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 715W (Tc) N-Channel - 100V 170A (Tc) 9 mOhm @ 500mA, 10V 5V @ 250µA 198nC @ 10V 6000pF @ 25V 10V ±20V
IXTK170N10P
RFQ
VIEW
RFQ
1,797
In-stock
IXYS MOSFET N-CH 100V 170A TO-264 Polar™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-264-3, TO-264AA TO-264 (IXTK) 715W (Tc) N-Channel - 100V 170A (Tc) 9 mOhm @ 500mA, 10V 5V @ 250µA 198nC @ 10V 6000pF @ 25V 10V ±20V
IXTP2N60P
RFQ
VIEW
RFQ
3,056
In-stock
IXYS MOSFET N-CH 600V 2A TO-220 Polar™ Last Time Buy Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 55W (Tc) N-Channel - 600V 2A (Tc) 5.1 Ohm @ 1A, 10V 5V @ 250µA 7nC @ 10V 240pF @ 25V 10V ±30V