Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRFSL4227PBF
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RFQ
3,172
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Infineon Technologies MOSFET N-CH 200V 62A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -40°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 330W (Tc) N-Channel - 200V 62A (Tc) 26 mOhm @ 46A, 10V 5V @ 250µA 98nC @ 10V 4600pF @ 25V 10V ±30V
IRFSL38N20DPBF
RFQ
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RFQ
1,211
In-stock
Infineon Technologies MOSFET N-CH 200V 43A TO-262-3 HEXFET® Active Tube MOSFET (Metal Oxide) - Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 - N-Channel - 200V 43A (Tc) 54 mOhm @ 26A, 10V 5V @ 250µA 91nC @ 10V 2900pF @ 25V - -
IRFB4227PBF
RFQ
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RFQ
3,830
In-stock
Infineon Technologies MOSFET N-CH 200V 65A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -40°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 330W (Tc) N-Channel - 200V 65A (Tc) 24 mOhm @ 46A, 10V 5V @ 250µA 98nC @ 10V 4600pF @ 25V 10V ±30V
IRFSL4127PBF
RFQ
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RFQ
1,343
In-stock
Infineon Technologies MOSFET N-CH 200V 72A TO-262 HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 375W (Tc) N-Channel - 200V 72A (Tc) 22 mOhm @ 44A, 10V 5V @ 250µA 150nC @ 10V 5380pF @ 50V - -
IRFB38N20DPBF
RFQ
VIEW
RFQ
760
In-stock
Infineon Technologies MOSFET N-CH 200V 43A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 3.8W (Ta), 300W (Tc) N-Channel - 200V 43A (Tc) 54 mOhm @ 26A, 10V 5V @ 250µA 91nC @ 10V 2900pF @ 25V 10V ±20V
IRFBA90N20DPBF
RFQ
VIEW
RFQ
2,354
In-stock
Infineon Technologies MOSFET N-CH 200V 98A SUPER-220 HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole Super-220™-3 (Straight Leads) SUPER-220™ (TO-273AA) 650W (Tc) N-Channel - 200V 98A (Tc) 23 mOhm @ 59A, 10V 5V @ 250µA 240nC @ 10V 6080pF @ 25V 10V ±30V
IRFP4127PBF
RFQ
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RFQ
2,428
In-stock
Infineon Technologies MOSFET N-CH 200V 75A TO-247AC HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 341W (Tc) N-Channel - 200V 75A (Tc) 21 mOhm @ 44A, 10V 5V @ 250µA 150nC @ 10V 5380pF @ 50V 10V ±20V
IRFP4227PBF
RFQ
VIEW
RFQ
1,523
In-stock
Infineon Technologies MOSFET N-CH 200V 65A TO-247AC HEXFET® Active Tube MOSFET (Metal Oxide) -40°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 330W (Tc) N-Channel - 200V 65A (Tc) 25 mOhm @ 46A, 10V 5V @ 250µA 98nC @ 10V 4600pF @ 25V 10V ±30V
IRFB4127PBF
RFQ
VIEW
RFQ
814
In-stock
Infineon Technologies MOSFET N-CH 200V 76A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 375W (Tc) N-Channel - 200V 76A (Tc) 20 mOhm @ 44A, 10V 5V @ 250µA 150nC @ 10V 5380pF @ 50V 10V ±20V
IRFP90N20DPBF
RFQ
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RFQ
3,501
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Infineon Technologies MOSFET N-CH 200V 94A TO-247AC HEXFET® Active Bulk MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 580W (Tc) N-Channel - 200V 94A (Tc) 23 mOhm @ 56A, 10V 5V @ 250µA 270nC @ 10V 6040pF @ 25V 10V ±30V
IRFP4668PBF
RFQ
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RFQ
2,368
In-stock
Infineon Technologies MOSFET N-CH 200V 130A TO-247AC HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 520W (Tc) N-Channel - 200V 130A (Tc) 9.7 mOhm @ 81A, 10V 5V @ 250µA 241nC @ 10V 10720pF @ 50V 10V ±30V
IRFI4227PBF
RFQ
VIEW
RFQ
3,856
In-stock
Infineon Technologies MOSFET N-CH 200V 26A TO-220FP HEXFET® Active Tube MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220AB Full-Pak 46W (Tc) N-Channel - 200V 26A (Tc) 25 mOhm @ 17A, 10V 5V @ 250µA 110nC @ 10V 4600pF @ 25V 10V ±30V