- Manufacture :
- Series :
- Operating Temperature :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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5 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
2,851
In-stock
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ON Semiconductor | MOSFET P-CH 400V 2A TO-220 | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 63W (Tc) | P-Channel | - | 400V | 2A (Tc) | 6.5 Ohm @ 1A, 10V | 5V @ 250µA | 13nC @ 10V | 350pF @ 25V | 10V | ±30V | |||
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VIEW |
2,634
In-stock
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ON Semiconductor | MOSFET P-CH 200V 2.8A TO-220 | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 52W (Tc) | P-Channel | - | 200V | 2.8A (Tc) | 2.7 Ohm @ 1.4A, 10V | 5V @ 250µA | 8nC @ 10V | 250pF @ 25V | 10V | ±30V | |||
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VIEW |
1,491
In-stock
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ON Semiconductor | MOSFET P-CH 400V 3.5A TO-220 | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 85W (Tc) | P-Channel | - | 400V | 3.5A (Tc) | 3.1 Ohm @ 1.75A, 10V | 5V @ 250µA | 23nC @ 10V | 680pF @ 25V | 10V | ±30V | |||
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VIEW |
2,619
In-stock
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ON Semiconductor | MOSFET P-CH 500V 2.7A TO-220 | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 85W (Tc) | P-Channel | - | 500V | 2.7A (Tc) | 4.9 Ohm @ 1.35A, 10V | 5V @ 250µA | 23nC @ 10V | 660pF @ 25V | 10V | ±30V | |||
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VIEW |
2,385
In-stock
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Infineon Technologies | MOSFET P-CH 150V 27A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 250W (Tc) | P-Channel | - | 150V | 27A (Tc) | 150 mOhm @ 16A, 10V | 5V @ 250µA | 110nC @ 10V | 2210pF @ 25V | 10V | ±20V |