Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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AOI4T60P
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1,879
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Alpha & Omega Semiconductor Inc. MOSFET N-CH - Obsolete Tube MOSFET (Metal Oxide) -50°C ~ 150°C (TJ) Through Hole TO-251-3 Stub Leads, IPak TO-251 83W (Tc) N-Channel 600V 4A (Tc) 2.1 Ohm @ 2A, 10V 5V @ 250µA 15nC @ 10V 522pF @ 100V 10V ±30V
SIHU3N50D-GE3
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1,374
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Vishay Siliconix MOSFET N-CH 500V 3A TO251 IPAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251 69W (Tc) N-Channel 500V 3A (Tc) 3.2 Ohm @ 2.5A, 10V 5V @ 250µA 12nC @ 10V 175pF @ 100V 10V ±30V
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RFQ
2,578
In-stock
Diodes Incorporated MOSFET P-CH 450V 4.6A TO251 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3, IPak, Short Leads TO-251 104W (Tc) P-Channel 450V 4.6A (Tc) 4.9 Ohm @ 1.05A, 10V 5V @ 250µA 13.7nC @ 10V 547pF @ 25V 10V ±30V
SIHU5N50D-GE3
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1,580
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Vishay Siliconix MOSFET N-CH 500V 5.3A TO251 IPAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251 104W (Tc) N-Channel 500V 5.3A (Tc) 1.5 Ohm @ 2.5A, 10V 5V @ 250µA 20nC @ 10V 325pF @ 100V 10V ±30V