Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
FQA20N40
RFQ
VIEW
RFQ
2,233
In-stock
ON Semiconductor MOSFET N-CH 400V 19.5A TO-3P QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 200W (Tc) N-Channel - 400V 19.5A (Tc) 220 mOhm @ 9.8A, 10V 5V @ 250µA 75nC @ 10V 2800pF @ 25V 10V ±30V
FQA10N80C
RFQ
VIEW
RFQ
684
In-stock
ON Semiconductor MOSFET N-CH 800V 10A TO-3P QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 240W (Tc) N-Channel - 800V 10A (Tc) 1.1 Ohm @ 5A, 10V 5V @ 250µA 58nC @ 10V 2800pF @ 25V 10V ±30V
IXTH36P10
RFQ
VIEW
RFQ
2,879
In-stock
IXYS MOSFET P-CH 100V 36A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 180W (Tc) P-Channel - 100V 36A (Tc) 75 mOhm @ 18A, 10V 5V @ 250µA 95nC @ 10V 2800pF @ 25V 10V ±20V
IXTH16P20
RFQ
VIEW
RFQ
3,025
In-stock
IXYS MOSFET P-CH 200V 16A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 300W (Tc) P-Channel - 200V 16A (Tc) 160 mOhm @ 500mA, 10V 5V @ 250µA 95nC @ 10V 2800pF @ 25V 10V ±20V
FQA10N80C-F109
RFQ
VIEW
RFQ
3,132
In-stock
ON Semiconductor MOSFET N-CH 800V 10A TO-3P QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 240W (Tc) N-Channel - 800V 10A (Tc) 1.1 Ohm @ 5A, 10V 5V @ 250µA 58nC @ 10V 2800pF @ 25V 10V ±30V