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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	GP2M005A060PGH	RFQ VIEW	PDF RFQ	842 In-stock	Global Power Technologies Group	MOSFET N-CH 600V 4.2A IPAK		-	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	I-PAK	98.4W (Tc)	N-Channel	-	600V	4.2A (Tc)	2.1 Ohm @ 2.1A, 10V	5V @ 250µA	14nC @ 10V	658pF @ 25V	10V	±30V
	GP2M005A060PG	RFQ VIEW	PDF RFQ	956 In-stock	Global Power Technologies Group	MOSFET N-CH 600V 4.2A IPAK		-	Obsolete	Tape & Reel (TR)	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	I-PAK	98.4W (Tc)	N-Channel	-	600V	4.2A (Tc)	2.1 Ohm @ 2.1A, 10V	5V @ 250µA	14nC @ 10V	658pF @ 25V	10V	±30V
	FQU4P25TU	RFQ VIEW	PDF RFQ	3,419 In-stock	ON Semiconductor	MOSFET P-CH 250V 3.1A IPAK		QFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	I-PAK	2.5W (Ta), 45W (Tc)	P-Channel	-	250V	3.1A (Tc)	2.1 Ohm @ 1.55A, 10V	5V @ 250µA	14nC @ 10V	420pF @ 25V	10V	±30V
	STD3NM60-1	RFQ VIEW	PDF RFQ	2,498 In-stock	STMicroelectronics	MOSFET N-CH 600V 3A IPAK		MDmesh™	Obsolete	Tube	MOSFET (Metal Oxide)	-65°C ~ 150°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	I-PAK	42W (Tc)	N-Channel	-	600V	3A (Tc)	1.5 Ohm @ 1.5A, 10V	5V @ 250µA	14nC @ 10V	324pF @ 25V	10V	±30V

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