Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Infineon Technologies MOSFET N-CH 55V 75A D2PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 170W (Tc) N-Channel - 55V 75A (Tc) 6.5 mOhm @ 66A, 10V 4V @ 250µA 110nC @ 10V 3450pF @ 25V 10V ±20V
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Infineon Technologies MOSFET N-CH 75V 75A D2PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 170W (Tc) N-Channel - 75V 75A (Tc) 9.4 mOhm @ 53A, 10V 4V @ 250µA 110nC @ 10V 3270pF @ 25V 10V ±20V
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Vishay Siliconix MOSFET N-CH 60V 50A D2PAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.7W (Ta), 190W (Tc) N-Channel - 60V 50A (Tc) 18 mOhm @ 43A, 10V 4V @ 250µA 110nC @ 10V 2400pF @ 25V 10V ±20V
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Infineon Technologies MOSFET N-CH 55V 75A D2PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 170W (Tc) N-Channel - 55V 75A (Tc) 6.5 mOhm @ 66A, 10V 4V @ 250µA 110nC @ 10V 3450pF @ 25V 10V ±20V
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602
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Infineon Technologies MOSFET N-CH 60V 72A D2PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 150W (Tc) N-Channel - 60V 72A (Tc) 12 mOhm @ 43A, 10V 4V @ 250µA 110nC @ 10V 1985pF @ 25V 10V ±20V