Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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AUIRF5210S
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1,242
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Infineon Technologies MOSFET P-CH 100V 38A D2PAK HEXFET® Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.1W (Ta), 170W (Tc) P-Channel - 100V 38A (Tc) 60 mOhm @ 38A, 10V 4V @ 250µA 230nC @ 10V 2780pF @ 25V 10V ±20V
SUD50P10-43-E3
RFQ
VIEW
RFQ
2,840
In-stock
Vishay Siliconix MOSFET P-CH 100V 38A TO252 TrenchFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -50°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252, (D-Pak) 8.3W (Ta), 136W (Tc) P-Channel - 100V 38A (Tc) 43 mOhm @ 9.4A, 10V 4V @ 250µA 160nC @ 10V 5230pF @ 50V 10V ±20V
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RFQ
VIEW
RFQ
798
In-stock
ON Semiconductor MOSFET P-CH 60V 38A TO-3PF QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole SC-94 TO-3PF 100W (Tc) P-Channel - 60V 38A (Tc) 26 mOhm @ 19A, 10V 4V @ 250µA 110nC @ 10V 3600pF @ 25V 10V ±25V
IRF5210STRRPBF
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VIEW
RFQ
634
In-stock
Infineon Technologies MOSFET P-CH 100V 38A D2PAK HEXFET® Not For New Designs Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.1W (Ta), 170W (Tc) P-Channel - 100V 38A (Tc) 60 mOhm @ 38A, 10V 4V @ 250µA 230nC @ 10V 2780pF @ 25V 10V ±20V
AUIRF5210STRL
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VIEW
RFQ
966
In-stock
Infineon Technologies MOSFET P-CH 100V 38A D2PAK HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.1W (Ta), 170W (Tc) P-Channel - 100V 38A (Tc) 60 mOhm @ 38A, 10V 4V @ 250µA 230nC @ 10V 2780pF @ 25V 10V ±20V
AUIRF5210STRL
RFQ
VIEW
RFQ
1,533
In-stock
Infineon Technologies MOSFET P-CH 100V 38A D2PAK HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.1W (Ta), 170W (Tc) P-Channel - 100V 38A (Tc) 60 mOhm @ 38A, 10V 4V @ 250µA 230nC @ 10V 2780pF @ 25V 10V ±20V
AUIRF5210STRL
RFQ
VIEW
RFQ
2,879
In-stock
Infineon Technologies MOSFET P-CH 100V 38A D2PAK HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.1W (Ta), 170W (Tc) P-Channel - 100V 38A (Tc) 60 mOhm @ 38A, 10V 4V @ 250µA 230nC @ 10V 2780pF @ 25V 10V ±20V
IRF5210SPBF
RFQ
VIEW
RFQ
3,861
In-stock
Infineon Technologies MOSFET P-CH 100V 38A D2PAK HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.1W (Ta), 170W (Tc) P-Channel - 100V 38A (Tc) 60 mOhm @ 38A, 10V 4V @ 250µA 230nC @ 10V 2780pF @ 25V 10V ±20V
IRF5210STRLPBF
RFQ
VIEW
RFQ
2,450
In-stock
Infineon Technologies MOSFET P-CH 100V 38A D2PAK HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.1W (Ta), 170W (Tc) P-Channel - 100V 38A (Tc) 60 mOhm @ 38A, 10V 4V @ 250µA 230nC @ 10V 2780pF @ 25V 10V ±20V
IRF5210STRLPBF
RFQ
VIEW
RFQ
3,573
In-stock
Infineon Technologies MOSFET P-CH 100V 38A D2PAK HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.1W (Ta), 170W (Tc) P-Channel - 100V 38A (Tc) 60 mOhm @ 38A, 10V 4V @ 250µA 230nC @ 10V 2780pF @ 25V 10V ±20V
IRF5210STRLPBF
RFQ
VIEW
RFQ
1,539
In-stock
Infineon Technologies MOSFET P-CH 100V 38A D2PAK HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.1W (Ta), 170W (Tc) P-Channel - 100V 38A (Tc) 60 mOhm @ 38A, 10V 4V @ 250µA 230nC @ 10V 2780pF @ 25V 10V ±20V
IRF5210LPBF
RFQ
VIEW
RFQ
2,492
In-stock
Infineon Technologies MOSFET P-CH 100V 38A TO-262 HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 3.1W (Ta), 170W (Tc) P-Channel - 100V 38A (Tc) 60 mOhm @ 38A, 10V 4V @ 250µA 230nC @ 10V 2780pF @ 25V 10V ±20V