- Series :
- Part Status :
- Packaging :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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15 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,396
In-stock
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Infineon Technologies | MOSFET N-CH 60V 1.6A SOT223 | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 60V | 1.6A (Ta) | 220 mOhm @ 1.6A, 10V | 4V @ 250µA | 8nC @ 10V | 160pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,275
In-stock
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Vishay Siliconix | MOSFET N-CH 400V 1.6A TO220FP | - | Active | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-220-3 Full Pack, Isolated Tab | TO-220-3 | - | N-Channel | - | 400V | 1.6A (Ta) | - | 4V @ 250µA | - | - | - | - | |||
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VIEW |
695
In-stock
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Infineon Technologies | MOSFET N-CH 60V 1.6A SOT223 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 60V | 1.6A (Ta) | 220 mOhm @ 1.6A, 10V | 4V @ 250µA | 8nC @ 10V | 160pF @ 25V | 10V | ±20V | |||
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|
VIEW |
1,622
In-stock
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Infineon Technologies | MOSFET N-CH 60V 1.6A SOT223 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 60V | 1.6A (Ta) | 220 mOhm @ 1.6A, 10V | 4V @ 250µA | 8nC @ 10V | 160pF @ 25V | 10V | ±20V | |||
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VIEW |
3,190
In-stock
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Infineon Technologies | MOSFET N-CH 100V 1.6A SOT223 | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 100V | 1.6A (Ta) | 200 mOhm @ 1.6A, 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | 10V | ±20V | |||
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VIEW |
861
In-stock
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Infineon Technologies | MOSFET N-CH 100V 1.6A SOT223 | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 100V | 1.6A (Ta) | 200 mOhm @ 1.6A, 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,793
In-stock
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Vishay Siliconix | MOSFET P-CH 60V 1.6A 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | P-Channel | - | 60V | 1.6A (Ta) | 280 mOhm @ 960mA, 10V | 4V @ 250µA | 19nC @ 10V | 570pF @ 25V | 10V | ±20V | |||
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VIEW |
3,126
In-stock
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Infineon Technologies | MOSFET N-CH 100V 1.6A SOT223 | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 100V | 1.6A (Ta) | 200 mOhm @ 1.6A, 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | 10V | ±20V | |||
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|
VIEW |
1,895
In-stock
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Infineon Technologies | MOSFET N-CH 100V 1.6A SOT223 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 100V | 1.6A (Ta) | 200 mOhm @ 1.6A, 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | 10V | ±20V | |||
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|
VIEW |
782
In-stock
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Infineon Technologies | MOSFET N-CH 100V 1.6A SOT223 | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 100V | 1.6A (Ta) | 200 mOhm @ 1.6A, 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | 10V | ±20V | |||
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VIEW |
3,712
In-stock
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Infineon Technologies | MOSFET N-CH 100V 1.6A SOT223 | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 100V | 1.6A (Ta) | 200 mOhm @ 1.6A, 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | 10V | ±20V | |||
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|
VIEW |
3,790
In-stock
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Vishay Siliconix | MOSFET P-CH 60V 1.6A 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | P-Channel | - | 60V | 1.6A (Ta) | 280 mOhm @ 960mA, 10V | 4V @ 250µA | 19nC @ 10V | 570pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,187
In-stock
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ON Semiconductor | MOSFET N-CH 150V 1.6A 3SSOT | PowerTrench® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SuperSOT-3 | 1.5W (Ta) | N-Channel | - | 150V | 1.6A (Ta) | 261 mOhm @ 1.6A, 10V | 4V @ 250µA | 5nC @ 10V | 225pF @ 75V | 6V, 10V | ±20V | |||
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|
VIEW |
1,474
In-stock
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ON Semiconductor | MOSFET N-CH 150V 1.6A 3SSOT | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SuperSOT-3 | 1.5W (Ta) | N-Channel | - | 150V | 1.6A (Ta) | 261 mOhm @ 1.6A, 10V | 4V @ 250µA | 5nC @ 10V | 225pF @ 75V | 6V, 10V | ±20V | |||
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VIEW |
889
In-stock
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ON Semiconductor | MOSFET N-CH 150V 1.6A 3SSOT | PowerTrench® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SuperSOT-3 | 1.5W (Ta) | N-Channel | - | 150V | 1.6A (Ta) | 261 mOhm @ 1.6A, 10V | 4V @ 250µA | 5nC @ 10V | 225pF @ 75V | 6V, 10V | ±20V | |||
