- Series :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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7 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
703
In-stock
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Vishay Siliconix | MOSFET P-CH 100V 12A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | - | P-Channel | - | 100V | 12A (Tc) | 300 mOhm @ 7.2A, 10V | 4V @ 250µA | 38nC @ 10V | 860pF @ 25V | 10V | ±20V | |||
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VIEW |
2,798
In-stock
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ON Semiconductor | MOSFET N-CH 600V 12A I2PAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 3.13W (Ta), 225W (Tc) | N-Channel | - | 600V | 12A (Tc) | 650 mOhm @ 6A, 10V | 4V @ 250µA | 63nC @ 10V | 2290pF @ 25V | 10V | ±30V | |||
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VIEW |
1,736
In-stock
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Infineon Technologies | MOSFET P-CH 55V 12A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 45W (Tc) | P-Channel | - | 55V | 12A (Tc) | 175 mOhm @ 7.2A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
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VIEW |
2,732
In-stock
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STMicroelectronics | MOSFET N-CH 500V 12A I2PAK | MDmesh™ II | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 100W (Tc) | N-Channel | - | 500V | 12A (Tc) | 320 mOhm @ 6A, 10V | 4V @ 250µA | 30nC @ 10V | 960pF @ 50V | 10V | ±25V | |||
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VIEW |
1,609
In-stock
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Infineon Technologies | MOSFET P-CH 55V 12A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 45W (Tc) | P-Channel | - | 55V | 12A (Tc) | 175 mOhm @ 7.2A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
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VIEW |
874
In-stock
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STMicroelectronics | MOSFET N-CH 650V 12A I2PAK | MDmesh™ II | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 125W (Tc) | N-Channel | - | 650V | 12A (Tc) | 380 mOhm @ 6A, 10V | 4V @ 250µA | 45nC @ 10V | 1300pF @ 50V | 10V | ±25V | |||
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VIEW |
3,182
In-stock
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STMicroelectronics | MOSFET N-CH 650V 12A I2PAK | MDmesh™ M2 | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 110W (Tc) | N-Channel | - | 650V | 12A (Tc) | 330 mOhm @ 6A, 10V | 4V @ 250µA | 20nC @ 10V | 770pF @ 100V | 10V | ±25V | |||
