Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRFP9240
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3,438
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Vishay Siliconix MOSFET P-CH 200V 12A TO-247AC - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 150W (Tc) P-Channel 200V 12A (Tc) 500 mOhm @ 7.2A, 10V 4V @ 250µA 44nC @ 10V 1200pF @ 25V 10V ±20V
STW14NM65N
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1,263
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STMicroelectronics MOSFET N-CH 650V 12A TO-247 MDmesh™ II Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247-3 125W (Tc) N-Channel 650V 12A (Tc) 380 mOhm @ 6A, 10V 4V @ 250µA 45nC @ 10V 1300pF @ 50V 10V ±25V
STW13NM50N
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2,966
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STMicroelectronics MOSFET N-CH 500V 12A TO-247 MDmesh™ II Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 100W (Tc) N-Channel 500V 12A (Tc) 320 mOhm @ 6A, 10V 4V @ 250µA 30nC @ 10V 960pF @ 50V 10V ±25V
IRFP9240PBF
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RFQ
2,969
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Vishay Siliconix MOSFET P-CH 200V 12A TO-247AC - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 150W (Tc) P-Channel 200V 12A (Tc) 500 mOhm @ 7.2A, 10V 4V @ 250µA 44nC @ 10V 1200pF @ 25V 10V ±20V
SIHG11N80E-GE3
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RFQ
1,609
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Vishay Siliconix MOSFET N-CH 800V 12A TO247AC E Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AC 179W (Tc) N-Channel 800V 12A (Tc) 440 mOhm @ 5.5A, 10V 4V @ 250µA 88nC @ 10V 1670pF @ 100V 10V ±30V