Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTH300N04T2
RFQ
VIEW
RFQ
3,613
In-stock
IXYS MOSFET N-CH 40V 300A TO-247 TrenchT2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 480W (Tc) N-Channel - 40V 300A (Tc) 2.5 mOhm @ 50A, 10V 4V @ 250µA 145nC @ 10V 10700pF @ 25V 10V ±20V
AUIRFP4004
RFQ
VIEW
RFQ
1,198
In-stock
Infineon Technologies MOSFET N-CH 40V 350A TO-247AC HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 380W (Tc) N-Channel - 40V 195A (Tc) 1.7 mOhm @ 195A, 10V 4V @ 250µA 330nC @ 10V 8920pF @ 25V 10V ±20V
IXTH340N04T4
RFQ
VIEW
RFQ
2,809
In-stock
IXYS MOSFET N-CH 40V 340A TrenchT4™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 480W (Tc) N-Channel - 40V 340A (Tc) 1.9 mOhm @ 100A, 10V 4V @ 250µA 256nC @ 10V 13000pF @ 25V 10V ±15V
IXTH270N04T4
RFQ
VIEW
RFQ
989
In-stock
IXYS MOSFET N-CH 40V 270A TrenchT4™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 375W (Tc) N-Channel - 40V 270A (Tc) 2.4 mOhm @ 50A, 10V 4V @ 250µA 182nC @ 10V 9140pF @ 25V 10V ±15V
IRFP4004PBF
RFQ
VIEW
RFQ
1,951
In-stock
Infineon Technologies MOSFET N-CH 40V 195A TO-247AC HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 380W (Tc) N-Channel - 40V 195A (Tc) 1.7 mOhm @ 195A, 10V 4V @ 250µA 330nC @ 10V 8920pF @ 25V 10V ±20V