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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	NTP27N06G	RFQ VIEW	PDF RFQ	3,251 In-stock	ON Semiconductor	MOSFET N-CH 60V 27A TO220AB		-	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	88.2W (Tc)	N-Channel	-	60V	27A (Ta)	46 mOhm @ 13.5A, 10V	4V @ 250µA	30nC @ 10V	1015pF @ 25V	10V	±20V
	MTP2955V	RFQ VIEW	PDF RFQ	3,842 In-stock	ON Semiconductor	MOSFET P-CH 60V 12A TO-220AB		-	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	60W (Tc)	P-Channel	-	60V	12A (Tc)	230 mOhm @ 6A, 10V	4V @ 250µA	30nC @ 10V	770pF @ 25V	10V	±15V
	NTP27N06	RFQ VIEW	PDF RFQ	1,175 In-stock	ON Semiconductor	MOSFET N-CH 60V 27A TO220AB		-	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	88.2W (Tc)	N-Channel	-	60V	27A (Ta)	46 mOhm @ 13.5A, 10V	4V @ 250µA	30nC @ 10V	1015pF @ 25V	10V	±20V
	IRFZ34E	RFQ VIEW	PDF RFQ	1,380 In-stock	Infineon Technologies	MOSFET N-CH 60V 28A TO-220AB		HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	68W (Tc)	N-Channel	-	60V	28A (Tc)	42 mOhm @ 17A, 10V	4V @ 250µA	30nC @ 10V	680pF @ 25V	10V	±20V
	IRFZ34EPBF	RFQ VIEW	PDF RFQ	2,237 In-stock	Infineon Technologies	MOSFET N-CH 60V 28A TO-220AB		HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	68W (Tc)	N-Channel	-	60V	28A (Tc)	42 mOhm @ 17A, 10V	4V @ 250µA	30nC @ 10V	680pF @ 25V	10V	±20V

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