- Series :
- Part Status :
- Power Dissipation (Max) :
- FET Type :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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6 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,327
In-stock
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Vishay Siliconix | MOSFET N-CH 100V 40A TO220AB | TrenchFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 3.75W (Ta), 107W (Tc) | N-Channel | - | 100V | 40A (Tc) | 30 mOhm @ 15A, 10V | 4V @ 250µA | 60nC @ 10V | 2400pF @ 25V | 6V, 10V | ±20V | |||
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VIEW |
3,760
In-stock
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STMicroelectronics | MOSFET N-CH 120V 40A TO-220 | STripFET™ II | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 150W (Tc) | N-Channel | - | 120V | 40A (Tc) | 32 mOhm @ 20A, 10V | 4V @ 250µA | 80nC @ 10V | 1880pF @ 25V | 10V | ±20V | |||
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VIEW |
3,988
In-stock
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Vishay Siliconix | MOSFET N-CH 250V 40A TO220AB | TrenchFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 3.75W (Ta), 300W (Tc) | N-Channel | - | 250V | 40A (Tc) | 60 mOhm @ 20A, 10V | 4V @ 250µA | 140nC @ 10V | 5000pF @ 25V | 6V, 10V | ±30V | |||
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VIEW |
2,674
In-stock
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ON Semiconductor | MOSFET N-CH 100V 40A TO-220AB | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 160W (Tc) | N-Channel | - | 100V | 40A (Tc) | 40 mOhm @ 40A, 10V | 4V @ 250µA | 300nC @ 20V | - | 10V | ±20V | |||
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VIEW |
1,982
In-stock
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STMicroelectronics | MOSFET N-CH 100V 40A TO-220 | STripFET™ II | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 115W (Tc) | N-Channel | - | 100V | 40A (Tc) | 35 mOhm @ 17.5A, 10V | 4V @ 250µA | 55nC @ 10V | 1550pF @ 25V | 10V | ±20V | |||
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VIEW |
1,806
In-stock
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Infineon Technologies | MOSFET P-CH 100V 40A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 200W (Tc) | P-Channel | - | 100V | 40A (Tc) | 60 mOhm @ 24A, 10V | 4V @ 250µA | 180nC @ 10V | 2700pF @ 25V | 10V | ±20V |