Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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HUF75939P3
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2,158
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ON Semiconductor MOSFET N-CH 200V 22A TO-220AB UltraFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 180W (Tc) N-Channel - 200V 22A (Tc) 125 mOhm @ 22A, 10V 4V @ 250µA 152nC @ 20V 2200pF @ 25V 10V ±20V
IXTP110N055T2
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2,613
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IXYS MOSFET N-CH 55V 110A TO-220 TrenchT2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 180W (Tc) N-Channel - 55V 110A (Tc) 6.6 mOhm @ 25A, 10V 4V @ 250µA 57nC @ 10V 3060pF @ 25V 10V ±20V
IXTP90N075T2
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RFQ
1,997
In-stock
IXYS MOSFET N-CH 75V 90A TO-220 TrenchT2™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 180W (Tc) N-Channel - 75V 90A (Tc) 10 mOhm @ 25A, 10V 4V @ 250µA 54nC @ 10V 3290pF @ 25V 10V ±20V
IRF1010NPBF
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RFQ
3,996
In-stock
Infineon Technologies MOSFET N-CH 55V 85A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 180W (Tc) N-Channel - 55V 85A (Tc) 11 mOhm @ 43A, 10V 4V @ 250µA 120nC @ 10V 3210pF @ 25V 10V ±20V