- Series :
- Packaging :
- Technology :
- Operating Temperature :
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- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
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12 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,211
In-stock
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Central Semiconductor Corp | MOSFET N-CH 100V 2A SOT-89 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA | SOT-89 | 1.2W (Ta) | N-Channel | 100V | 2A (Ta) | 300 mOhm @ 2A, 10V | 2.5V @ 250µA | 6nC @ 5V | 550pF @ 25V | 4.5V, 10V | 20V | |||
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VIEW |
695
In-stock
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Central Semiconductor Corp | MOSFET N-CH 100V 2A SOT-89 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA | SOT-89 | 1.2W (Ta) | N-Channel | 100V | 2A (Ta) | 300 mOhm @ 2A, 10V | 2.5V @ 250µA | 6nC @ 5V | 550pF @ 25V | 4.5V, 10V | 20V | |||
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|
VIEW |
3,288
In-stock
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Central Semiconductor Corp | MOSFET N-CH 100V 2A SOT-89 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA | SOT-89 | 1.2W (Ta) | N-Channel | 100V | 2A (Ta) | 300 mOhm @ 2A, 10V | 2.5V @ 250µA | 6nC @ 5V | 550pF @ 25V | 4.5V, 10V | 20V | |||
|
VIEW |
1,686
In-stock
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STMicroelectronics | MOSFET P-CH 30V 2A SOT-23 | STripFET™ H6 | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 350mW (Tc) | P-Channel | 30V | 2A (Ta) | 56 mOhm @ 1A, 10V | 2.5V @ 250µA | 6nC @ 4.5V | 639pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
2,753
In-stock
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STMicroelectronics | MOSFET P-CH 30V 2A SOT-23 | STripFET™ H6 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 350mW (Tc) | P-Channel | 30V | 2A (Ta) | 56 mOhm @ 1A, 10V | 2.5V @ 250µA | 6nC @ 4.5V | 639pF @ 25V | 4.5V, 10V | ±20V | |||
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|
VIEW |
2,693
In-stock
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STMicroelectronics | MOSFET P-CH 30V 2A SOT-23 | STripFET™ H6 | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 350mW (Tc) | P-Channel | 30V | 2A (Ta) | 56 mOhm @ 1A, 10V | 2.5V @ 250µA | 6nC @ 4.5V | 639pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
2,065
In-stock
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ON Semiconductor | MOSFET N-CH 150V 2A SOT-223 | PowerTrench® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223-4 | 1W (Ta) | N-Channel | 150V | 2A (Ta) | 228 mOhm @ 2A, 10V | 2.5V @ 250µA | 6.3nC @ 10V | 335pF @ 75V | 4.5V, 10V | ±20V | |||
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VIEW |
2,829
In-stock
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ON Semiconductor | MOSFET N-CH 150V 2A SOT-223 | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223-4 | 1W (Ta) | N-Channel | 150V | 2A (Ta) | 228 mOhm @ 2A, 10V | 2.5V @ 250µA | 6.3nC @ 10V | 335pF @ 75V | 4.5V, 10V | ±20V | |||
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|
VIEW |
3,427
In-stock
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ON Semiconductor | MOSFET N-CH 150V 2A SOT-223 | PowerTrench® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223-4 | 1W (Ta) | N-Channel | 150V | 2A (Ta) | 228 mOhm @ 2A, 10V | 2.5V @ 250µA | 6.3nC @ 10V | 335pF @ 75V | 4.5V, 10V | ±20V | |||
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VIEW |
3,743
In-stock
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EPC | TRANS GAN 65V 2.7A BUMPED DIE | eGaN® | Active | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | 65V | 2A (Ta) | 530 mOhm @ 500mA, 5V | 2.5V @ 250µA | - | 21pF @ 32.5V | 5V | +6V, -4V | |||
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VIEW |
2,870
In-stock
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EPC | TRANS GAN 65V 2.7A BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | 65V | 2A (Ta) | 530 mOhm @ 500mA, 5V | 2.5V @ 250µA | - | 21pF @ 32.5V | 5V | +6V, -4V | |||
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VIEW |
3,532
In-stock
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EPC | TRANS GAN 65V 2.7A BUMPED DIE | eGaN® | Active | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | 65V | 2A (Ta) | 530 mOhm @ 500mA, 5V | 2.5V @ 250µA | - | 21pF @ 32.5V | 5V | +6V, -4V | |||
