Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IRL530A
RFQ
VIEW
RFQ
3,557
In-stock
ON Semiconductor MOSFET N-CH 100V 14A TO-220 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220-3 62W (Tc) N-Channel - 100V 14A (Tc) 120 mOhm @ 7A, 5V 2V @ 250µA 24nC @ 5V 755pF @ 25V 5V ±20V
RFP14N05L
RFQ
VIEW
RFQ
1,124
In-stock
ON Semiconductor MOSFET N-CH 50V 14A TO-220AB - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 48W (Tc) N-Channel - 50V 14A (Tc) 100 mOhm @ 14A, 5V 2V @ 250µA 40nC @ 10V 670pF @ 25V 5V ±10V
IRLIZ24NPBF
RFQ
VIEW
RFQ
1,538
In-stock
Infineon Technologies MOSFET N-CH 55V 14A TO220FP HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220AB Full-Pak 26W (Tc) N-Channel - 55V 14A (Tc) 60 mOhm @ 8.4A, 10V 2V @ 250µA 15nC @ 5V 480pF @ 25V 4V, 10V ±16V