Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Vgs (Max) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
SI2356DS-T1-GE3
RFQ
VIEW
RFQ
2,303
In-stock
Vishay Siliconix MOSFET N-CH 40V 4.3A SOT-23 TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TO-236 960mW (Ta), 1.7W (Tc) N-Channel - 40V 4.3A (Tc) 51 mOhm @ 3.2A, 10V 1.5V @ 250µA 13nC @ 10V 370pF @ 20V 2.5V, 10V ±12V
SI2356DS-T1-GE3
RFQ
VIEW
RFQ
1,026
In-stock
Vishay Siliconix MOSFET N-CH 40V 4.3A SOT-23 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TO-236 960mW (Ta), 1.7W (Tc) N-Channel - 40V 4.3A (Tc) 51 mOhm @ 3.2A, 10V 1.5V @ 250µA 13nC @ 10V 370pF @ 20V 2.5V, 10V ±12V
SI2356DS-T1-GE3
RFQ
VIEW
RFQ
1,174
In-stock
Vishay Siliconix MOSFET N-CH 40V 4.3A SOT-23 TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TO-236 960mW (Ta), 1.7W (Tc) N-Channel - 40V 4.3A (Tc) 51 mOhm @ 3.2A, 10V 1.5V @ 250µA 13nC @ 10V 370pF @ 20V 2.5V, 10V ±12V
FDZ191P
RFQ
VIEW
RFQ
2,158
In-stock
ON Semiconductor MOSFET P-CH 20V 3A 6WLCSP PowerTrench® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-UFBGA, WLCSP 6-WLCSP 1.9W (Ta) P-Channel - 20V 3A (Ta) 85 mOhm @ 1A, 4.5V 1.5V @ 250µA 13nC @ 10V 800pF @ 10V 1.5V, 4.5V ±8V
FDZ191P
RFQ
VIEW
RFQ
1,036
In-stock
ON Semiconductor MOSFET P-CH 20V 3A 6WLCSP PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-UFBGA, WLCSP 6-WLCSP 1.9W (Ta) P-Channel - 20V 3A (Ta) 85 mOhm @ 1A, 4.5V 1.5V @ 250µA 13nC @ 10V 800pF @ 10V 1.5V, 4.5V ±8V
FDZ191P
RFQ
VIEW
RFQ
2,717
In-stock
ON Semiconductor MOSFET P-CH 20V 3A 6WLCSP PowerTrench® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-UFBGA, WLCSP 6-WLCSP 1.9W (Ta) P-Channel - 20V 3A (Ta) 85 mOhm @ 1A, 4.5V 1.5V @ 250µA 13nC @ 10V 800pF @ 10V 1.5V, 4.5V ±8V