Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Vgs (Max) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
AON1634
RFQ
VIEW
RFQ
1,167
In-stock
Alpha & Omega Semiconductor Inc. MOSFET N-CH 30V 4A 6DFN - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-PowerUFDFN 6-DFN (1.6x1.6) 1.8W (Ta) N-Channel - 30V 4A (Ta) 54 mOhm @ 4A, 10V 1.5V @ 250µA 10nC @ 10V 245pF @ 15V 2.5V, 10V ±12V
FDME910PZT
RFQ
VIEW
RFQ
2,088
In-stock
ON Semiconductor MOSFET P CH 20V 8A MICROFET PowerTrench® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-PowerUFDFN MicroFet 1.6x1.6 Thin 2.1W (Ta) P-Channel - 20V 8A (Ta) 24 mOhm @ 8A, 4.5V 1.5V @ 250µA 21nC @ 4.5V 2110pF @ 10V 1.8V, 4.5V ±8V
FDME910PZT
RFQ
VIEW
RFQ
2,186
In-stock
ON Semiconductor MOSFET P CH 20V 8A MICROFET PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-PowerUFDFN MicroFet 1.6x1.6 Thin 2.1W (Ta) P-Channel - 20V 8A (Ta) 24 mOhm @ 8A, 4.5V 1.5V @ 250µA 21nC @ 4.5V 2110pF @ 10V 1.8V, 4.5V ±8V
FDME910PZT
RFQ
VIEW
RFQ
3,325
In-stock
ON Semiconductor MOSFET P CH 20V 8A MICROFET PowerTrench® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-PowerUFDFN MicroFet 1.6x1.6 Thin 2.1W (Ta) P-Channel - 20V 8A (Ta) 24 mOhm @ 8A, 4.5V 1.5V @ 250µA 21nC @ 4.5V 2110pF @ 10V 1.8V, 4.5V ±8V