- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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9 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,930
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 0.17A SMD | U-MOSVII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-70, SOT-323 | USM | 150mW (Ta) | N-Channel | - | 60V | 170mA (Ta) | 3.9 Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.35nC @ 4.5V | 17pF @ 10V | 4.5V, 10V | ±20V | ||||
VIEW |
3,904
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 0.4A SOT23 | U-MOSVII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 320mW (Ta) | N-Channel | - | 60V | 400mA (Ta) | 1.5 Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.6nC @ 4.5V | 40pF @ 10V | 4.5V, 10V | ±20V | ||||
VIEW |
1,143
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 0.2A | U-MOSVII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 320mW (Ta) | N-Channel | - | 60V | 200mA (Ta) | 3.9 Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.35nC @ 4.5V | 17pF @ 10V | 4.5V, 10V | ±20V | ||||
VIEW |
1,108
In-stock
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Toshiba Semiconductor and Storage | X34 SMALL LOW ON RESISTANCE NCH | U-MOSVII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C | Surface Mount | SC-75, SOT-416 | SSM | 150mW (Ta) | N-Channel | - | 60V | 300mA (Ta) | 1.5 Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.6nC @ 4.5V | 40pF @ 10V | 4.5V, 10V | ±20V | ||||
VIEW |
759
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 0.15A CST3C | U-MOSVII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-1123 | CST3C | 500mW (Ta) | N-Channel | - | 60V | 150mA (Ta) | 3.9 Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.35nC @ 4.5V | 17pF @ 10V | 4.5V, 10V | ±20V | ||||
VIEW |
2,970
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 0.4A | U-MOSVII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SC-101, SOT-883 | CST3 | 500mW (Ta) | N-Channel | - | 60V | 400mA (Ta) | 1.5 Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.6nC @ 4.5V | 40pF @ 10V | 4.5V, 10V | ±20V | ||||
VIEW |
2,541
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 0.17A | U-MOSVII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SC-75, SOT-416 | SSM | 150mW (Ta) | N-Channel | - | 60V | 170mA (Ta) | 3.9 Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.35nC @ 4.5V | 17pF @ 10V | 4.5V, 10V | ±20V | ||||
VIEW |
1,813
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 0.4A | U-MOSVII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini | 270mW (Ta) | N-Channel | - | 60V | 400mA (Ta) | 1.5 Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.6nC @ 4.5V | 40pF @ 10V | 4.5V, 10V | ±20V | ||||
VIEW |
1,059
In-stock
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Toshiba Semiconductor and Storage | LOAD SWITCH CURRENT REDUCTION | U-MOSVII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C | Surface Mount | SC-70, SOT-323 | USM | 150mW (Ta) | N-Channel | - | 60V | 400mA (Ta) | 1.5 Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.6nC @ 4.5V | 40pF @ 10V | 4.5V, 10V | ±20V |